maximum ratings: (t c =25c) symbol BU806 bu807 units collector-base voltage v cbo 400 330 v collector-emitter voltage v cev 400 330 v collector-emitter voltage v ceo 200 150 v emitter-base voltage v ebo 6.0 v continuous collector current i c 8.0 a peak collector current i cm 15 a continuous base current i b 2.0 a power dissipation p d 60 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 70 c/w thermal resistance jc 2.08 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i ces v ce =400v (BU806) 100 a i ces v ce =330v (bu807) 100 a i cev v ce =400v, v eb =6.0v (BU806) 100 a i cev v ce =330v, v eb =6.0v (bu807) 100 a i ebo v eb =6.0v 3.5 ma bv ceo i c =100ma ( BU806) 200 v bv ceo i c =100ma ( bu807) 150 v v ce(sat) i c =5.0a, i b =50ma 1.5 v v be(sat) i c =5.0a, i b =50ma 2.4 v v f i f =4.0a 2.0 v t on v cc =100v, i c =5.0a, i b1 =50ma, i b2 =500ma 0.35 s t off v cc =100v, i c =5.0a, i b1 =50ma, i b2 =500ma 0.4 1.0 s BU806 bu807 npn silicon darlington transistor description: the central semiconductor BU806 and bu807 types are npn silicon darlington transistors designed for high voltage, high current, fast switching applications. marking: full part number to-220 case r0 (4-august 2011) www.centralsemi.com
BU806 bu807 npn silicon darlington transistor to-220 case - mechanical outline lead code: 1) base 2) collector 3) emitter tab) collector marking: full part number www.centralsemi.com r0 (4-august 2011)
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